any changing of specification will not be informed individual BAV99DW quad chips surface mount switching diode array maximum ratings (each diode) rating symbol value unit reverse voltage v r 75 vdc forward current i f 150 madc peak forward surge current i fm(surge) 400 madc thermal characteristics characteristic symbol max unit total device dissipation fr 5 board (1) t a = 25 c derate above 25 c p d 200 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 250 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking b a v99dw= kjg electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit off characteristics reverse breakdown voltage (i (br) = 100 m adc) v (br) 75 e vdc reverse voltage leakage current (v r = 25 vdc, t j = 150 c) (v r = 70 vdc) (v r = 70 vdc, t j = 150 c) i r e e e 3 0 2.5 5 0 m adc diode capacitance (v r = 0, f = 1.0 mhz) c d e 2 pf forward voltage (i f = 1.0 madc) (i f = 10 madc) (i f = 50 madc) (i f = 150 madc) v f e e e e 715 855 1000 1250 mvdc reverse recovery time (i f = i r = 10 madc, i r(rec) = 1.0 madc) (figure 1) r l = 100 w t rr e 4.0 ns 1 . fr ? 5 = 1.0 x 0.75 x 0.06 2 in. 2.alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. features fast switching speed surface mount package ideally suited for automatic insertion for general purpose switching applications high conductance http://www.secosgmbh.com ele k troni sche bauelemente to p v i e w 01 -j a n-200 6 rev. b page 1 of 2 sot-363 dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .055(1.40) .047(1.20) .026typ (0.65typ) .096(2.45) .085(2.15) .021ref (0.525)ref .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) 8 o o 0 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual BAV99DW dual series chips surface mount switching diode 100 0.2 0.4 v f , f orward voltage (v) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , r everse voltage (v) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , r everse voltage (v) 0.64 0.60 0.56 0.52 c d , d iode capacitance (pf) 2468 i f , f orward current (ma) (ma) figure 2. forward voltage figure 3. leakage current figure 4. capacitance t a = 40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , r everse curren t ( m a) notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w output pulse generator 50 w i nput sampling oscilloscopes t r t p t 10% 90% i f i r t rr t i r(rec ) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec ) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit http://www.secosgmbh.com ele k troni sche bauelemente 01 -jan-2006 rev. b page 2 of 2
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